? 2001 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 144 a i ar 36 a e ar t c = 25 c19mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 5g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 18a 70 m ? pulse test, t 300 s, duty cycle d 2 % hiperfet tm n-channel enhancement mode features ? international standard package jedec to-247 ad ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? high commutating dv/dt rating ? fast switching times applications ? switch-mode and resonant-mode power supplies ? motor controls ? uninterruptible power supplies (ups) ? dc choppers advantages ? easy to mount with 1 screw (isolated mounting screw hole) ? space savings ? high power density 98859 9/01 g = gate, d = drain, s = source, tab = drain (tab) g d s ixtj 36n20 v dss = 200 v i d25 = 36 a r ds(on) = 70 m ? ? ? ? ? t rr < 200 ns advance technical information
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfj 36n30 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 12 22 s c iss 2970 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 530 pf c rss 180 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 130 ns t d(off) r g = 2 ? (external) 110 ns t f 98 ns q g(on) 106 140 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 24 40 nc q gd 43 74 nc r thjc 0.65 k/w r thck 0.24 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive; 144 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, t j = 25 c 200 ns v r = 100 v t j = 125 c 350 ns leaded to-268 package outline
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